<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Liu, Jingqian</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Xu, Zhe</style></author><author><style face="normal" font="default" size="100%">Jiang, Haisang</style></author><author><style face="normal" font="default" size="100%">Yang, Zhenchuan</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Min Yu</style></author><author><style face="normal" font="default" size="100%">Xie, Bing</style></author><author><style face="normal" font="default" size="100%">Wu, Wengang</style></author><author><style face="normal" font="default" size="100%">Ma, Xiaohua</style></author><author><style face="normal" font="default" size="100%">Zhang, Jincheng</style></author><author><style face="normal" font="default" size="100%">Hao, Yue</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure</style></title><secondary-title><style face="normal" font="default" size="100%">ELECTRONICS LETTERS</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">NOV 5</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">23</style></number><volume><style face="normal" font="default" size="100%">51</style></volume><pages><style face="normal" font="default" size="100%">1932-U96</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The oxidation mechanism in self-terminating wet etching technique with thermal oxidation of AlGaN layer followed by etching in KOH solution is investigated. Spike-shape remnants of oxidised AlGaN are observed at the initial stage of wet etching in KOH solution, which could be completely etched away after enough etching time. Transmission electron microscope/energy dispersive spectroscopy analysis indicates the existence of crystalline AlGaN inside the remnants. Finally, a possible explanation is given that the oxide channels from AlGaN surface towards AlGaN/GaN interface generated during thermal oxidation are firstly etched away at the initial stage of KOH wet etching, then after enough time these remnants with non-c axis crystal orientation surfaces exposed to KOH solution could be completely etched away leaving GaN layer beneath unaffected, which realises self-terminating etching.</style></abstract><custom7><style face="normal" font="default" size="100%">000364380100050</style></custom7></record></records></xml>