Enhanced Gate Reliability and High Threshold Voltage p-GaN HEMT With p-NiO/p-GaN Heterojunction - Wang, Jinbing; Wang, Maojun; Wang, Pengfei; Wei, Jin; Wang, Jinyan; Pei, Xinyi; Sun, Na; Ye, Jiandong; Zhang, Xun; Feng, Yuxia; Yang, Han; Shen, Bo (2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2026)
Keywords: 10-year lifetime; Aluminum; Displays; Electrons; Gate leakage; gate reliability; Generative adversarial networks; HEMTs; Indexes; Leakage currents; Mercury (metals); p-GaN high-electron-mobility transistor (HEMT); p-NiO/p-GaN heterojunction; Printing; threshold voltage (Vth); time-dependent gate breakdown (TDGB); Voltage