An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps - Wu, Yanlin; Wei, Jin; Wang, Maojun; Nuo, Muqin; Yang, Junjie; Wei Lin; Zheng, Zheyang; Li Zhang; Hua, Mengyuan; Yang, Xuelin; Hao, Yilong; Chen, Kevin J.; et al. (IEEE Electron Device Letters, 2023)
Keywords: Active-passivation p-GaN gate HEMT (AP-HEMT); dynamic Rₒₙ; e-mode; Electron traps; HEMTs; Logic gates; mobile holes; MODFETs; passivation; surface screening; Testing; Wide band gap semiconductors