Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings - Xu, Jiayue; Liu, Xuan; Xie, Bing; Hao, Yilong; Wen, Cheng P.; Wei, Jin; Wang, Maojun (IEEE Transactions on Electron Devices, 2023)
Keywords: Anodes; Edge termination (ET); Electric fields; Fluorine; Gallium nitride; gallium nitride (GaN); guard ring (GR); Ion implantation; ions; Leakage currents; Vertical Schottky barrier diodes (SBDs)