@conference {11553626,
	title = {Enhanced Gate Reliability and High Threshold Voltage p-GaN HEMT With p-NiO/p-GaN Heterojunction},
	booktitle = {2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
	year = {2026},
	pages = {625-628},
	keywords = {10-year lifetime, Aluminum, Displays, Electrons, Gate leakage, gate reliability, Generative adversarial networks, HEMTs, Indexes, Leakage currents, Mercury (metals), p-GaN high-electron-mobility transistor (HEMT), p-NiO/p-GaN heterojunction, Printing, threshold voltage (Vth), time-dependent gate breakdown (TDGB), Voltage},
	doi = {10.1109/ISPSD64561.2026.11553626},
	author = {Wang, Jinbing and Wang, Maojun and Wang, Pengfei and Wei, Jin and Wang, Jinyan and Pei, Xinyi and Sun, Na and Ye, Jiandong and Zhang, Xun and Feng, Yuxia and Yang, Han and Shen, Bo}
}
