@article {10643119,
	title = {Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs},
	journal = {IEEE Electron Device Letters},
	volume = {45},
	number = {10},
	year = {2024},
	pages = {1728-1731},
	keywords = {Current measurement, Electrostatics, field plate, HEMTs, Leakage currents, Logic gates, MODFETs, off-state leakage, p-GaN HEMTs, source electrostatic interaction, Wide band gap semiconductors},
	doi = {10.1109/LED.2024.3447236},
	author = {Song, Jiaojiao and Wang, Maojun and Wei, Jin and Fan, Zetao and Zhang, Jiaxin and Yang, Han and Wang, Pengfei and Xie, Bing and Cheng Li and Li Yuan and Shen, Bo}
}
