@article {9950512,
	title = {An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps},
	journal = {IEEE Electron Device Letters},
	volume = {44},
	number = {1},
	year = {2023},
	pages = {25-28},
	keywords = {Active-passivation p-GaN gate HEMT (AP-HEMT), dynamic Rₒₙ, e-mode, Electron traps, HEMTs, Logic gates, mobile holes, MODFETs, passivation, surface screening, Testing, Wide band gap semiconductors},
	doi = {10.1109/LED.2022.3222170},
	author = {Wu, Yanlin and Wei, Jin and Wang, Maojun and Nuo, Muqin and Yang, Junjie and Wei Lin and Zheng, Zheyang and Li Zhang and Hua, Mengyuan and Yang, Xuelin and Hao, Yilong and Chen, Kevin J. and Shen, Bo}
}
