@article {10040993,
	title = {Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings},
	journal = {IEEE Transactions on Electron Devices},
	volume = {70},
	number = {4},
	year = {2023},
	pages = {1745-1750},
	keywords = {Anodes, Edge termination (ET), Electric fields, Fluorine, Gallium nitride, gallium nitride (GaN), guard ring (GR), Ion implantation, ions, Leakage currents, Vertical Schottky barrier diodes (SBDs)},
	doi = {10.1109/TED.2023.3241260},
	author = {Xu, Jiayue and Liu, Xuan and Xie, Bing and Hao, Yilong and Wen, Cheng P. and Wei, Jin and Wang, Maojun}
}
