@article {YIN2022629,
	title = {Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes},
	journal = {Fundamental Research},
	volume = {2},
	number = {4},
	year = {2022},
	pages = {629-634},
	abstract = {In this study, the physical properties of F ion-implanted GaN were thoroughly studied, and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed. Transmission electron microscopy results indicate that the ion-implanted region maintains a single-crystal structure even with the implantation of high-energy F ions, indicating that the high resistivity of the edge termination region is not induced by amorphization. Alternately, ion implantation-induced deep levels could compensate the electrons and lead to a highly resistive layer. In addition to the bulk effect, the direct bombardment of high-energy F ions resulted in a rough and nitrogen-deficient surface, which was confirmed via atomic force microscopy (AFM) and X-ray photoelectron spectroscopy. The implanted surface with a large density of nitrogen vacancies can accommodate electrons, and it is more conductive than the bulk in the implanted region, which is validated via spreading resistance profiling and conductive AFM measurements. Under reverse bias, the implanted surface can spread the potential in the lateral direction, whereas the acceptor traps capture electrons acting as space charges, shifting the peak electric field into the bulk region in the vertical direction. As a result, the Schottky barrier diode terminated with high-energy F ion-implanted regions exhibits a breakdown voltage of over 1.2 kV.},
	keywords = {Edge termination, Electric field modulation effect, GaN, Ion implantation, Schottky barrier diodes},
	issn = {2667-3258},
	doi = {https://doi.org/10.1016/j.fmre.2021.11.027},
	url = {https://www.sciencedirect.com/science/article/pii/S2667325821002855},
	author = {Yin, Ruiyuan and Chiachia Li and Bin Zhang and Wang, Jinyan and Fu, Yunyi and Wen, Cheng P. and Hao, Yilong and Shen, Bo and Wang, Maojun}
}
