@article { ISI:000448030000011,
	title = {Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	volume = {65},
	number = {11},
	year = {2018},
	month = {NOV},
	pages = {4814-4819},
	publisher = {IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC},
	type = {Article},
	address = {445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA},
	abstract = {A novel early gate dielectric AIGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) process is reported. With the highquality Si3N4 dielectric by low-pressure chemical vapor deposition and damage free, self-terminating passivation layer etching at the gate area, the MIS-HEMTs on 150-mm Si substrate demonstrate excellent output performance and good uniformity. The interface trap density between the gate insulator and the barrier layer is as low as 2 x 10(12) cm(-2).eV(-1) extracted by the conductance method. The MIS-HEMT fabricated on the wafer delivers an extremely small gate leakage current of 10(-9) mA/mm and a high I-on/I-off ratio of 10(11). The subthreshold swing (SS) is around 80 mV/dec, and the saturated output current density is 750 mA/mm. The dynamic on-resistance increases about 42\% at a quiescent drain bias of 600 V. The V-th shift is -0.63 and -0.89 V at a high temperature of 200 degrees C and negative gate-bias stress of -25 V, respectively, indicating a comparable stability with the state-of-the-art MIS-HEMTs. An excellent threshold voltage and SS uniformity (1 - sigma/mu) with the value of 94.5\% and 95.2\% are achieved on the 150-mm wafer.},
	keywords = {AlGaN/GaN, damage-free etching, early dielectric, metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs), self-terminating, Si compatibility, uniformity},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2869703},
	author = {Hui Sun and Wang, Maojun and Jianguo Chen and Liu, Peng and Kuang, Wenteng and Meihua Liu and Hao, Yilong and Dongmin Chen}
}
