@article { ISI:000439649900012,
	title = {Measurement of the Transport Property of 2-DEG in AlGaN/GaN Heterostructures Based on Circular Transmission Line Modeling of Two Concentric-Circle Schottky Contacts},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	volume = {65},
	number = {8},
	year = {2018},
	month = {AUG},
	pages = {3163-3168},
	publisher = {IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC},
	type = {Article},
	address = {445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA},
	abstract = {Frequency dispersion of the capacitance (C-f) of GaN-based heterostructure are commonly observed at high frequencies. Analytical solutions are derived for frequency dispersion of the heterostructure{\textquoteright}s capacitance measured on two concentric-circle Schottky contacts, in form of Bessel function, by modeling a distributed network of heterostructure and solving corresponding circular transmission line functions. Solutions reveal C-f is determined by the R-s of 2-D electron gas (2-DEG). So in reverse, the sheet resistance at a certain carrier density can be extracted from the C-f measurement. By fitting experimental C-f data with the model, we obtain a peak mobility of 2044 cm(2)/V.s corresponding to a 2-DEG density of 8.2 x 10(12) cm(-2) and a sheet resistance of 373 Omega/square on an Al0.25Ga0.75N/GaN heterostructure on silicon substrate. The advantage of two Schottky contacts is that they could be implemented by mercury probes with the same geometry, then achieving nondestructive and instant feedback on carrier transport properties and uniformity of as-grown III-V compound semiconductor wafers},
	keywords = {2-D electron gas (2-DEG), AlGaN/GaN, mobility, sheet resistance, two concentric-circle Schottky contacts (TCCSCs)},
	issn = {0018-9383},
	doi = {10.1109/TED.2018.2846729},
	author = {Wei Lin and Wen, Cheng P. and Hao, Yilong and Shen, Bo and Wang, Maojun}
}
