@article {doi:10.1063/1.5037646,
	title = {Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET},
	journal = {Applied Physics Letters},
	volume = {112},
	number = {23},
	year = {2018},
	pages = {233505},
	doi = {10.1063/1.5037646},
	url = {https://doi.org/10.1063/1.5037646},
	author = {Yin, Ruiyuan and Li,Yue and Yu Sun and Wen, Cheng P. and Hao, Yilong and Wang, Maojun}
}
