@conference { INSPEC:17059481,
	title = {Kilovolt GaN MOSHEMT on silicon substrate with breakdown electric field close to the theoretical limit},
	booktitle = {2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings},
	year = {2017},
	note = {2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 28 May-1 June 2017, Sapporo, Japan},
	month = {2017},
	pages = {93-6},
	type = {Conference Paper},
	abstract = {This work reports a kilovolt and low current collapse normally-off GaN MOSHEMT on silicon substrate. The device with a drift length of 3 mum features a threshold voltage of 1.7 V and an output current of 430 mA/mm at 8 V gate bias. The off-state breakdown voltage (BV) is as high as 1021 V (800 V) defined at a drain leakage criterion of 10 muA/mm with floating (grounded) substrate. The corresponding breakdown electric field is 3.4 MV/cm and the Baliga{\textquoteright}s figure-of-merit (BFOM) is 1.6 GW/cm2. A small degradation of the dynamic on-resistance (Ron, d) about 30\% is observed with a short pulse width of 500 ns and a quiescent drain bias of 60 V. The record value is supposed to benefit from the intrinsic step-graded field plate, high quality LPCVD Si3N4 passivation and material optimization of 4.5 mum thick epitaxial layer.},
	isbn = {978-4-88686-094-1},
	author = {Ming Tao and Wang, Maojun and Wen, C.P. and Wang, Jinyan and Hao, Yilong and Wu, Wengang and Cheng, Kai and Shen, Bo}
}
