@conference { ISI:000265829300127,
	title = {Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors},
	booktitle = {IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST},
	series = {International Electron Devices Meeting},
	year = {2008},
	note = {IEEE International Electron Devices Meeting, San Francisco, CA, DEC 15-17, 2008},
	pages = {543-546},
	publisher = {IEEE Electron Devices Soc},
	organization = {IEEE Electron Devices Soc},
	abstract = {A hybrid molecular dynamics (MD)/kinetic Monte Carlo (KMC) model is developed for atomistic modeling of fluorine ion implantation and diffusion in AlGaN/GaN heterostructures. The MD simulation reveals the F distribution profiles and the corresponding defect profiles, and most importantly, the potential energies of fluorine ions in the III-nitride material system. Using the results from the MD simulation, the diffusion process is simulated with KMC method, and the modeling results are validated by the secondary-ion-mass-spectrum (SIMS) measurement. The surface effect on the fluorine{\textquoteright}s stability and its improvement by passivation are also successfully modeled.},
	isbn = {978-1-4244-2377-4},
	author = {Li Yuan and Wang, Maojun and Chen, Kevin J.}
}
