@article { ISI:000278995900002,
	title = {Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	volume = {57},
	number = {7},
	year = {2010},
	month = {JUL},
	pages = {1492-1496},
	abstract = {AlGaN/GaN high-electron mobility transistor{\textquoteright}s (HEMT{\textquoteright}s) off-state breakdown is investigated using drain-current injection techniques with different injection current levels. Competitions between the source leakage and gate leakage, pure leakage and impact ionization, and source-and gate-injection-induced impact ionization during the drain-injection measurement are discussed in detail. It was found that the breakdown originates from the source/gate leakage at low drain injection levels but is dominated by source/gate-induced impact ionization process at high drain injection currents. The source-induced impact ionization usually precedes the gate-induced impact ionization in low-gate leakage devices, resulting in a premature three-terminal off-state breakdown. We also found that the gate-bias value affects the breakdown voltage in the conventional three-terminal off-state breakdown I-V measurement and should be carefully considered.},
	issn = {0018-9383},
	doi = {10.1109/TED.2010.2048960},
	author = {Wang, Maojun and Chen, Kevin J.}
}
