@article { ISI:000286515400024,
	title = {Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	volume = {58},
	number = {2},
	year = {2011},
	month = {FEB},
	pages = {460-465},
	abstract = {Improvement of the AlGaN/GaN high-electron mobility transistor{\textquoteright}s (HEMT{\textquoteright}s) OFF-state breakdown voltage is achieved by implanting (19)F(+) ions at an energy of 50 keV and dose of 1 x 10(12) cm(-2) under the gate region using BF(3) as the source. The charge state of the implanted fluorine ions changes from positive to negative in the AlGaN/GaN structure because of fluorine{\textquoteright}s strong electronegativity. The negative-charged fluorine ions at the back side of the two-dimensional electron gas can raise the energy barrier of the GaN buffer layer under the channel, effectively blocking the current injected from the source to the high-field region of the GaN channel when the HEMT is biased at OFF-state. The source-injected electrons, if not blocked, could flow to the high-field region and initiate a premature three-terminal OFF-state breakdown in a conventional AlGaN/GaN HEMT. A 38\% improvement of the three-terminal OFF-state breakdown voltage and 40\% improvement of the power figure-of-merit V(BD-off)(2)/R(on) are achieved in the enhanced back barrier HEMT.},
	issn = {0018-9383},
	doi = {10.1109/TED.2010.2091958},
	author = {Wang, Maojun and Chen, Kevin J.}
}
