@conference { ISI:000380585600108,
	title = {Characteristics of Submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC Substrate},
	booktitle = {2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)},
	series = {IEEE Conference on Electron Devices and Solid-State Circuits},
	year = {2013},
	note = {IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, PEOPLES R CHINA, JUN 03-05, 2013},
	abstract = {AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with thick (>30 nm), high-kappa (TiO2/NiO), submicron-footprint (0.4 mu m) gate dielectric on SiC substrate are demonstrated, which are found to exhibit low gate leakage current (similar to 1 nA/mm of gate periphery), high I-MAX (1 A/mm), and high drain breakdown voltage (188 V). The derived current gain cutoff frequency is 30 GHz (from S-parameter measurements). The output power density is 6.6 W/mm, and the associated power-add ed-efficiency is 46\% at 2.5 GHz frequency and 50 V drain bias. This high performance submicron-footprint MOSHEMT is highly promising for microwave power amplifier applications in communication and radar systems.},
	isbn = {978-1-4673-2523-3},
	author = {Meng Di and Lin Shuxun and Wen, Cheng P. and Wang Maojun and Wang Jinyan and Hao Yilong and Zhang Yaohui and Lau, Kei May and Wu Wengang}
}
