@article { ISI:000329061300011,
	title = {High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT},
	journal = {IEEE ELECTRON DEVICE LETTERS},
	volume = {35},
	number = {1},
	year = {2014},
	month = {JAN},
	pages = {33-35},
	abstract = {High temperature characteristics of GaN-based inverter is presented from room temperature (RT) to 300 degrees C, which is integrated with enhancement-mode MOSFET and depletion-mode HEMT. At 300 degrees C, the fabricated inverter operates properly at a supply voltage (V-DD) of 7 V with 6.5 V for logic voltage swing, 3.3 V for threshold voltage (V-TH), 2.4 V for logic-low noise margin (NML), and 3.4 V for logic-high noise margin (NMH). Meanwhile, the inverter exhibits small variations from RT to 300 degrees C in terms of logic voltage swing, V-TH, NML, and NMH with the maximum relative variations of 2.2\%, 5.7\%, 12.9\%, and 4.9\% in such temperature range, respectively.},
	issn = {0741-3106},
	doi = {10.1109/LED.2013.2291854},
	author = {Xu, Zhe and Wang, Jinyan and Yong Cai and Liu, Jingqian and Zhen Yang and Li, Xiaoping and Wang, Maojun and Min Yu and Xie, Bing and Wu, Wengang and Ma, Xiaohua and Zhang, Jincheng and Hao, Yue}
}
