@conference { ISI:000346735500062,
	title = {Normally-Off Hybrid Al2O3/GaN MOSFET on Silicon Substrate Based on Wet-Etching},
	booktitle = {2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES \& IC{\textquoteright}S (ISPSD)},
	series = {Proceedings of the International Symposium on Power Semiconductor Devices \& ICs},
	year = {2014},
	note = {IEEE 26th International Symposium on Power Semiconductor Devices \& IC{\textquoteright}s (ISPSD), Waikoloa, HI, JUN 15-19, 2014},
	pages = {253-256},
	publisher = {IEEE},
	organization = {IEEE},
	abstract = {This paper reports a normally-off high voltage hybrid Al203/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al203/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer curve. The three terminal off-state breakdown voltage is 1650 V for the device with 30 gm gate-drain distance with floating Si substrate. The breakdown voltage is limited to 1000 V when the Si substrate is grounded. The on-resistance is 7.0 m Omega cm(2) for the device with 30 gm gate-drain distance and the power figure of merit is 388 MW/cm2. The small signal RF performance of the normally-off GaN MOSFET is also evaluated.},
	isbn = {978-1-4799-2918-4},
	issn = {1063-6854},
	author = {Wang, Maojun and Wang, Ye and Zhang, Chuan and Wen, Cheng P. and Wang, Jinyan and Hao, Yilong and Wu, Wengang and Shen, Bo and Chen, Kevin J.}
}
