@article { ISI:000338026200063,
	title = {900 V/1.6 m Omega . cm(2) Normally Off Al2O3/GaN MOSFET on Silicon Substrate},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	volume = {61},
	number = {6, SI},
	year = {2014},
	month = {JUN},
	pages = {2035-2040},
	abstract = {In this paper, we report the device performance of a high-voltage normally off Al2O3/GaN MOSFET on the Si substrate. Normally off operation is obtained by multiple cycles of O-2 plasma oxidation and wet oxide-removal gate recess process. The recessed normally off GaN MOSFET with 3 mu m gate-drain distance exhibits a maximum drain current of 585 mA/mm at 9 V gate bias. The threshold voltage of the MOSFET is 2.8 V with a standard derivation of 0.2 V on the sample with an area of 2 x 2 cm(2). The gate leakage current is below 10(-6) mA/mm during the whole gate swing up to 9 V and the I-ON/I-OFF ratio is larger than 10(9), indicating the good quality of Al2O3 gate insulator. The MOSFET with 10 mu m gate-drain distance shows a three terminal OFF-state breakdown voltage (BV) of 967 V at zero gate-source bias with a drain leakage current criterion of 1 mu A/mm. The specific ON-resistance (R-ON,R- SP) of the device is 1.6 m Omega . cm(2) and the power figure of merit (BV2/R-ON,R- SP) is 584 MW/cm(2).},
	issn = {0018-9383},
	doi = {10.1109/TED.2014.2315994},
	author = {Wang, Maojun and Wang, Ye and Zhang, Chuan and Xie, Bing and Wen, Cheng P. and Wang, Jinyan and Hao, Yilong and Wu, Wengang and Chen, Kevin J. and Shen, Bo}
}
