@article { ISI:000344588100008,
	title = {Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed I-V Measurement},
	journal = {IEEE ELECTRON DEVICE LETTERS},
	volume = {35},
	number = {11},
	year = {2014},
	month = {NOV},
	pages = {1094-1096},
	abstract = {In this letter, we investigated the behaviors of surface-and buffer-induced current collapse in AlGaN/GaN high-electron mobility transistors (HEMTs) using a soft-switched pulsed I-V measurement with different quiescent bias points. It is found that the surface-and buffer-related current collapse have different relationship with the gate and drain biases (V-GS0, V-DS0) during quiescent bias stress. The surface-induced current collapse in devices without passivation monotonically increases with the negative V-GS0, suggesting that an electron injection to the surface from gate leakage is the dominant mechanism and the Si3N4 passivation could effectively eliminate such current collapse. The buffer-induced current collapse in devices with intentionally carbon-doped buffer layer exhibits a different relationship with V-GS0 after surface passivation. The buffer-related current collapse shows a bell-shaped behavior with V-GS0, suggesting that a hot electron trapping in the buffer is the dominant mechanism. The soft-switched pulsed I-V measurement provides an effective method to distinguish between the surface-and buffer-related current collapse in group III-nitride HEMTs.},
	issn = {0741-3106},
	doi = {10.1109/LED.2014.2356720},
	author = {Wang, Maojun and Yan, Dawei and Zhang, Chuan and Xie, Bing and Wen, Cheng P. and Wang, Jinyan and Hao, Yilong and Wu, Wengang and Shen, Bo}
}
