@article { ISI:000345575400013,
	title = {Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio},
	journal = {IEEE ELECTRON DEVICE LETTERS},
	volume = {35},
	number = {12},
	year = {2014},
	month = {DEC},
	pages = {1200-1202},
	abstract = {Postgate annealing (PGA) in N-2/O-2 atmosphere at 300 degrees C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique. After 45-min annealing, the device OFF-state leakage current decreases by more than two orders of magnitude and thus a low OFF-state leakage current of similar to 10(-13) A/mm is obtained at room temperature, resulting in an excellent ON/OFF current ratio of similar to 10(12). At 250 degrees C, the device still exhibits a low OFF-state leakage current of similar to 10(-9) A/mm and high ON/OFF current ratio of similar to 10(8). Meanwhile, a strong correlation between the OFF-state leakage current and mesa isolation current is observed as we change the annealing time: 1) the lower the mesa isolation current and 2) the lower the OFF-state leakage current and thus the higher the ON/OFF current ratio. It is the suppression of the mesa isolation current owing to the passivation of atomic layer deposition Al2O3 that leads to the improvement of the OFF-state leakage current and ON/OFF current ratio after PGA. Besides, the device shows no obvious change in terms of its threshold voltage and maximum drain current after PGA.},
	issn = {0741-3106},
	doi = {10.1109/LED.2014.2360541},
	author = {Xu, Zhe and Wang, Jinyan and Yong Cai and Liu, Jingqian and Jin, Chunyan and Yang, Zhenchuan and Wang, Maojun and Min Yu and Xie, Bing and Wu, Wengang and Ma, Xiaohua and Zhang, Jincheng and Hao, Yue}
}
