@article { ISI:000345994700050,
	title = {Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs},
	journal = {ELECTRONICS LETTERS},
	volume = {50},
	number = {25},
	year = {2014},
	month = {DEC 4},
	pages = {1980-1981},
	abstract = {A self-terminating gate recess wet etching technique with thermal oxidation of the AlGaN/GaN layer followed by etching in potassium hydroxide (KOH) solution was recently proposed by the present authors for normally-off AlGaN/GaN metal-oxide semiconductor field effect transistors (MOSFETs). In this present reported work, the oxidation process inside the AlGaN/GaN heterostructure involved in this technique was analysed using several material characterisation methods. The measurement results show that the concentration and depth of the O element distribution increase with increased thermal oxidation temperature. It is worth noting that after 650 degrees C oxidation almost no O element could be found in the GaN layer and the O element mainly locates in the AlGaN layer with an obvious correlation between the distribution of Al and O elements, where the Al(Ga)-oxide was detected by X-ray photoelectron spectroscopy, which could be etched by 70 degrees C KOH. Thus, self-terminating wet etching on the AlGaN/GaN material is achieved.},
	issn = {0013-5194},
	doi = {10.1049/el.2014.2790},
	author = {Liu, Jingqian and Wang, Jinyan and Xu, Zhe and Jiang, Haisang and Yang, Zhenchuan and Wang, Maojun and Min Yu and Xie, Bing and Wu, Wengang and Ma, Xiaohua and Zhang, Jincheng and Hao, Yue}
}
