@article { ISI:000349611800018,
	title = {Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer},
	journal = {APPLIED PHYSICS LETTERS},
	volume = {106},
	number = {5},
	year = {2015},
	month = {FEB 2},
	abstract = {We report the interface characterization of Al2O3/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al2O3/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D-it in MOS structures, Dit in the device with AlN was determined to be in the range of 10(11)-10(12) eV(-1) cm(-2), showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well. (C) 2015 AIP Publishing LLC.},
	issn = {0003-6951},
	doi = {10.1063/1.4907861},
	author = {Liu, Shenghou and Yang, Shu and Tang, Zhikai and Jiang, Qimeng and Liu, Cheng and Wang, Maojun and Shen, Bo and Chen, Kevin J.}
}
