@article { ISI:000364380100050,
	title = {Locally non-uniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure},
	journal = {ELECTRONICS LETTERS},
	volume = {51},
	number = {23},
	year = {2015},
	month = {NOV 5},
	pages = {1932-U96},
	abstract = {The oxidation mechanism in self-terminating wet etching technique with thermal oxidation of AlGaN layer followed by etching in KOH solution is investigated. Spike-shape remnants of oxidised AlGaN are observed at the initial stage of wet etching in KOH solution, which could be completely etched away after enough etching time. Transmission electron microscope/energy dispersive spectroscopy analysis indicates the existence of crystalline AlGaN inside the remnants. Finally, a possible explanation is given that the oxide channels from AlGaN surface towards AlGaN/GaN interface generated during thermal oxidation are firstly etched away at the initial stage of KOH wet etching, then after enough time these remnants with non-c axis crystal orientation surfaces exposed to KOH solution could be completely etched away leaving GaN layer beneath unaffected, which realises self-terminating etching.},
	issn = {0013-5194},
	doi = {10.1049/el.2015.1755},
	author = {Liu, Jingqian and Wang, Jinyan and Xu, Zhe and Jiang, Haisang and Yang, Zhenchuan and Wang, Maojun and Min Yu and Xie, Bing and Wu, Wengang and Ma, Xiaohua and Zhang, Jincheng and Hao, Yue}
}
