@article { ISI:000373129300006,
	title = {A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices},
	journal = {IEEE ELECTRON DEVICE LETTERS},
	volume = {37},
	number = {4},
	year = {2016},
	month = {APR},
	pages = {377-380},
	abstract = {In this letter, a plasma-free etch stop structure is developed for GaN HEMT toward enhancement-mode operation. The self-terminated precision gate recess is realized by inserting a thin AlN/GaN bilayer in the AlGaN barrier layer. The gate recess is stopped automatically at the GaN insertion layer after high-temperature oxidation and wet etch, leaving a thin AlGaN barrier to maintain a quantum well channel that is normally pinched off. With addition of an Al2O3 gate dielectric, quasi normally OFF GaN MOSHEMTs have been fabricated with high threshold uniformity and low ON-resistance comparable with the normally ON devices on the same wafer. A high channel mobility of 1400 cm(2)/V . s was obtained due to the preservation of the high electron mobility in the quantum-well channel under the gate.},
	issn = {0741-3106},
	doi = {10.1109/LED.2016.2533422},
	author = {Lin, Shuxun and Wang, Maojun and Sang, Fei and Ming Tao and Wen, Cheng P. and Xie, Bing and Min Yu and Wang, Jinyan and Hao, Yilong and Wu, Wengang and Jun Xu and Cheng, Kai and Shen, Bo}
}
