@article { ISI:000389342200038,
	title = {Buffer-Induced Time-Dependent OFF-State Leakage in AlGaN/GaN High Electron Mobility Transistors on Silicon},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	volume = {63},
	number = {12},
	year = {2016},
	month = {DEC},
	pages = {4860-4864},
	abstract = {Time-dependent OFF-state leakage behavior of AlGaN/GaN MISHEMTs on silicon substrate is investigated and a novel degradation mechanism is proposed in this paper. Under constant high voltage OFF-state stress, drain leakage current gradually increases with stress time and the behavior is gate bias and temperature-dependent. Consecutive OFF-state breakdown measurement with drain injection technique indicates that the negative shift of threshold voltage (V-th) is responsible for the increase of drain leakage current during stress measurement. It is proposed that the negative shift of V-th is mainly induced by the ionization of uncompensated donor like deep levels near the channel, which are most likely to be located in the 300-nm-thick unintentionally doped GaN layer above the carbon doped buffer layer.},
	issn = {0018-9383},
	doi = {10.1109/TED.2016.2614332},
	author = {Ming Tao and Wang, Maojun and Liu, Shaofei and Xie, Bing and Min Yu and Wen, Cheng P. and Wang, Jinyan and Hao, Yilong and Wu, Wengang and Shen, Bo}
}
