<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wang, Zongwei</style></author><author><style face="normal" font="default" size="100%">Zheng, Qilin</style></author><author><style face="normal" font="default" size="100%">Kang, Jian</style></author><author><style face="normal" font="default" size="100%">Yu, Zhizhen</style></author><author><style face="normal" font="default" size="100%">Zhong, Guofang</style></author><author><style face="normal" font="default" size="100%">Ling, Yaotian</style></author><author><style face="normal" font="default" size="100%">Bao, Lin</style></author><author><style face="normal" font="default" size="100%">Bao, Shengyu</style></author><author><style face="normal" font="default" size="100%">Bai, Guandong</style></author><author><style face="normal" font="default" size="100%">Zheng, Shan</style></author><author><style face="normal" font="default" size="100%">others</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Self-activation neural network based on self-selective memory device with rectified multilevel states</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Transactions on Electron Devices</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2020</style></year></dates><number><style face="normal" font="default" size="100%">10</style></number><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><volume><style face="normal" font="default" size="100%">67</style></volume><pages><style face="normal" font="default" size="100%">4166–4171</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>