<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Luo, Wenpu</style></author><author><style face="normal" font="default" size="100%">Zhu, Runteng</style></author><author><style face="normal" font="default" size="100%">Shao, Hanyong</style></author><author><style face="normal" font="default" size="100%">Xu, Xiaojian</style></author><author><style face="normal" font="default" size="100%">Zhou, Yuejia</style></author><author><style face="normal" font="default" size="100%">Ru HUANG</style></author><author><style face="normal" font="default" size="100%">Tang, Kechao</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Decoupling Polarization and Charges by In-Situ Vmid Extraction for Insight Into Trapping Dynamics of FeMFET</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Electron Device Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">accuracy</style></keyword><keyword><style  face="normal" font="default" size="100%">calibration</style></keyword><keyword><style  face="normal" font="default" size="100%">Computed tomography</style></keyword><keyword><style  face="normal" font="default" size="100%">Data models</style></keyword><keyword><style  face="normal" font="default" size="100%">FeFET dynamics</style></keyword><keyword><style  face="normal" font="default" size="100%">FeFETs</style></keyword><keyword><style  face="normal" font="default" size="100%">FeMFET</style></keyword><keyword><style  face="normal" font="default" size="100%">Ferroelectric FET (FeFET)</style></keyword><keyword><style  face="normal" font="default" size="100%">Hafnium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">Logic gates</style></keyword><keyword><style  face="normal" font="default" size="100%">MFMIS-FeFET</style></keyword><keyword><style  face="normal" font="default" size="100%">polarization and charge trapping</style></keyword><keyword><style  face="normal" font="default" size="100%">Semiconductor device modeling</style></keyword><keyword><style  face="normal" font="default" size="100%">Switches</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">trap modeling</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2025</style></year></dates><number><style face="normal" font="default" size="100%">8</style></number><volume><style face="normal" font="default" size="100%">46</style></volume><pages><style face="normal" font="default" size="100%">1321-1324</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>