<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Zhou, Yuejia</style></author><author><style face="normal" font="default" size="100%">Liang, Zhongxin</style></author><author><style face="normal" font="default" size="100%">Luo, Wenpu</style></author><author><style face="normal" font="default" size="100%">Yu, Ming</style></author><author><style face="normal" font="default" size="100%">Zhu, Runteng</style></author><author><style face="normal" font="default" size="100%">Lv, Xiao</style></author><author><style face="normal" font="default" size="100%">Li, Jiachen</style></author><author><style face="normal" font="default" size="100%">Huang, Qianqian</style></author><author><style face="normal" font="default" size="100%">Liu, Fei</style></author><author><style face="normal" font="default" size="100%">Tang, Kechao</style></author><author><style face="normal" font="default" size="100%">Ru HUANG</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Ferroelectric and Interlayer Co-optimization with In-depth Analysis for High Endurance FeFET</style></title><secondary-title><style face="normal" font="default" size="100%">2022 International Electron Devices Meeting (IEDM)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2022</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Dec</style></date></pub-dates></dates><pages><style face="normal" font="default" size="100%">6.2.1-6.2.4</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In face of the critical endurance issue, for the first time we take a holistic perspective to co-optimize the ferroelectric materials and interlayer in FeFET. Compared to the common HZO based gate stack, the novel combination of Hf0.95 Al0.05 O2+Al2 O3 enhances the endurance to $\gt 5 \times 10 ^9$ cycles while maintaining a retention &amp;gt; 10 years. In-depth analysis based on DFT and DQSCV reveal the reduction of interlayer electric field and interface charge trapping as the mechanism of optimization. We also develop a distributed interface trap model to correlate different trapping dynamics with the interlayer property in each device. This work pushes forward the understanding and development of high endurance strategy for FeFET.</style></abstract></record></records></xml>