<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">K. Tang</style></author><author><style face="normal" font="default" size="100%">Ni, Z. Y.</style></author><author><style face="normal" font="default" size="100%">Liu, Q. H.</style></author><author><style face="normal" font="default" size="100%">Quhe, R. G.</style></author><author><style face="normal" font="default" size="100%">Zheng, Q. Y.</style></author><author><style face="normal" font="default" size="100%">Zheng, J. X.</style></author><author><style face="normal" font="default" size="100%">Fei, R. X.</style></author><author><style face="normal" font="default" size="100%">Gao, Z. X.</style></author><author><style face="normal" font="default" size="100%">Lu, J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Electronic and transport properties of a biased multilayer hexagonal boron nitride</style></title><secondary-title><style face="normal" font="default" size="100%">The European Physical Journal B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2012</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2012/09/05</style></date></pub-dates></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1140/epjb/e2012-30236-6</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">9</style></number><volume><style face="normal" font="default" size="100%">85</style></volume><pages><style face="normal" font="default" size="100%">301</style></pages><isbn><style face="normal" font="default" size="100%">1434-6036</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We explore the electronic and transport properties out of a biased multilayer hexagonal boron nitride (h-BN) by first-principles calculations. The band gaps of multilayer h-BN decrease almost linearly with increasing perpendicular electric field, irrespective of the layer number N and stacking manner. The critical electric filed (E0) required to close the band gap decreases with the increasing N and can be approximated by E0 = 3.2 / (N − 1) (eV). We provide a quantum transport simulation of a dual-gated 4-layer h-BN with graphene electrodes. The transmission gap in this device can be effectively reduced by double gates, and a high on-off ratio of 3000 is obtained with relatively low voltage. This renders biased MLh-BN a promising channel in field effect transistor fabrication.</style></abstract></record></records></xml>