Improved Memory Density and Endurance by a Novel 1T3C FeFET for BEOL Multi-level Cell Memory - Zhu, Runteng; Zhou, Yuejia; Sun, Chuanlin; Huang, Weiqin; Dong, Junchen; Ru HUANG; Tang, Kechao (2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2024)
Keywords: Capacitors; Degradation; Ferroelectric FET (FeFET); In-memory computing; iron; Logic gates; Multi-level cell memory; Oxide Semiconductor channel; Semiconductor device measurement; Writing