@article {11039847,
	title = {Decoupling Polarization and Charges by In-Situ Vmid Extraction for Insight Into Trapping Dynamics of FeMFET},
	journal = {IEEE Electron Device Letters},
	volume = {46},
	number = {8},
	year = {2025},
	pages = {1321-1324},
	keywords = {accuracy, calibration, Computed tomography, Data models, FeFET dynamics, FeFETs, FeMFET, Ferroelectric FET (FeFET), Hafnium compounds, Logic gates, MFMIS-FeFET, polarization and charge trapping, Semiconductor device modeling, Switches, Thin film transistors, trap modeling},
	doi = {10.1109/LED.2025.3580719},
	author = {Luo, Wenpu and Zhu, Runteng and Shao, Hanyong and Xu, Xiaojian and Zhou, Yuejia and Ru HUANG and Tang, Kechao}
}
