@conference {10511544,
	title = {Improved Memory Density and Endurance by a Novel 1T3C FeFET for BEOL Multi-level Cell Memory},
	booktitle = {2024 8th IEEE Electron Devices Technology \&amp; Manufacturing Conference (EDTM)},
	year = {2024},
	pages = {1-3},
	keywords = {Capacitors, Degradation, Ferroelectric FET (FeFET), In-memory computing, iron, Logic gates, Multi-level cell memory, Oxide Semiconductor channel, Semiconductor device measurement, Writing},
	doi = {10.1109/EDTM58488.2024.10511544},
	author = {Zhu, Runteng and Zhou, Yuejia and Sun, Chuanlin and Huang, Weiqin and Dong, Junchen and Ru HUANG and Tang, Kechao}
}
