@article {26654,
	title = {Electronic and transport properties of a biased multilayer hexagonal boron nitride},
	journal = {The European Physical Journal B},
	volume = {85},
	number = {9},
	year = {2012},
	month = {2012/09/05},
	pages = {301},
	abstract = {We explore the electronic and transport properties out of a biased multilayer hexagonal boron nitride (h-BN) by first-principles calculations. The band gaps of multilayer h-BN decrease almost linearly with increasing perpendicular electric field, irrespective of the layer number N and stacking manner. The critical electric filed (E0) required to close the band gap decreases with the increasing N and can be approximated by E0 = 3.2 / (N - 1) (eV). We provide a quantum transport simulation of a dual-gated 4-layer h-BN with graphene electrodes. The transmission gap in this device can be effectively reduced by double gates, and a high on-off ratio of 3000 is obtained with relatively low voltage. This renders biased MLh-BN a promising channel in field effect transistor fabrication.},
	isbn = {1434-6036},
	url = {https://link.springer.com/article/10.1140/epjb/e2012-30236-6},
	author = {K. Tang and Ni, Z. Y. and Liu, Q. H. and Quhe, R. G. and Zheng, Q. Y. and Zheng, J. X. and Fei, R. X. and Gao, Z. X. and Lu, J.}
}
