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Shi Y, Wu M, Zhang F, Feng J. (111) surface states of SnTe. Physical Review B [Internet]. 2014;90. 访问链接

Jiang H, Liu HW, Feng J, Sun QF, Xie XC. Transport Discovery of Emerging Robust Helical Surface States in Z(2)=0 Systems. Physical Review Letters [Internet]. 2014;112. 访问链接

Li X, Liu HW, Jiang H, Wang F, Feng J. Edge engineering of a topological Bi(111) bilayer. Physical Review B [Internet]. 2014;90. 访问链接

Li X, Zhang F, Niu Q, Feng J. Superlattice valley engineering for designer topological insulators. Scientific Reports [Internet]. 2014;4. 访问链接

Fu XW, Jacopin G, Shahmohammadi M, Liu R, Benameur M, Ganiere JD, Feng J, Guo WL, Liao ZM, Deveaud B, et al. Exciton Drift in Semiconductors under Uniform Strain Gradients: Application to Bent ZnO Microwires. Acs Nano [Internet]. 2014;8:3412-3420. 访问链接

Fu XW, Su C, Fu Q, Zhu XL, Zhu R, Liu CP, Liao ZM, Xu J, Guo WL, Feng J, et al. Tailoring Exciton Dynamics by Elastic Strain- Gradient in Semiconductors. Advanced Materials [Internet]. 2014;26:2572-2579. 访问链接