<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hong-Hua, Xu</style></author><author><style face="normal" font="default" size="100%">Xiao-Yan, Liu</style></author><author><style face="normal" font="default" size="100%">Yu-Hui, He</style></author><author><style face="normal" font="default" size="100%">Chun, Fan</style></author><author><style face="normal" font="default" size="100%">Gang, Du</style></author><author><style face="normal" font="default" size="100%">Ai-Dong, Sun</style></author><author><style face="normal" font="default" size="100%">Ru-Qi, Han</style></author><author><style face="normal" font="default" size="100%">Jin-Feng, Kang</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Valence band variation in Si (110) nanowire induced by a covered insulator</style></title><secondary-title><style face="normal" font="default" size="100%">Chinese Physics B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year></dates><number><style face="normal" font="default" size="100%">1</style></number><publisher><style face="normal" font="default" size="100%">IOP Publishing</style></publisher><volume><style face="normal" font="default" size="100%">19</style></volume><pages><style face="normal" font="default" size="100%">014601</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>