<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Quang Huy Le</style></author><author><style face="normal" font="default" size="100%">Dang Khoa Huynh</style></author><author><style face="normal" font="default" size="100%">Wang, D.</style></author><author><style face="normal" font="default" size="100%">Zhixing Zhao</style></author><author><style face="normal" font="default" size="100%">Steffen Lehmann</style></author><author><style face="normal" font="default" size="100%">Thomas Kämpfe</style></author><author><style face="normal" font="default" size="100%">Matthias Rudolph</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs</style></title><secondary-title><style face="normal" font="default" size="100%">2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2020</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/9218369</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Angeles, CA, USA</style></pub-location><pages><style face="normal" font="default" size="100%">131-134</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper presents the W-band noise performance of the 22nm FDSOI CMOS technology. In detail, the mm-wave thin-oxide MOSFETs is characterized comprehensively in term of device geometries using the tuner-based noise measurement approach. To aid the noise analysis and extraction, the following study adopts an accurate small-signal equivalent circuit model validated well with bias-dependence up to 110 GHz. The effects of back-gate bias to the overall noise performance are also addressed in this work. The test devices exhibit low noise figure in the full W-band 75-110 GHz. Besides, NF min of 2.8 dB and 3.6 dB is recorded at 94 GHz respectively for the n- and p-FETs with 18nm gate-length (N f = 32, W f = 1.0 µm). The result of this study indicates the comparable performance of the 22nm FDSOI technology to other candidates for W-band applications.</style></abstract></record></records></xml>