<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Quang Huy Le</style></author><author><style face="normal" font="default" size="100%">Dang Khoa Huynh</style></author><author><style face="normal" font="default" size="100%">Defu Wang</style></author><author><style face="normal" font="default" size="100%">Thomas Kämpfe</style></author><author><style face="normal" font="default" size="100%">Steffen Lehmann</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">DC-110 GHz Characterization of 22FDX®FDSOI Transistors for 5G Transmitter Front-End</style></title><secondary-title><style face="normal" font="default" size="100%">ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/8901762</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pub-location><style face="normal" font="default" size="100%">Cracow, Poland</style></pub-location><pages><style face="normal" font="default" size="100%">218-221</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This work presents a detailed study on the high-frequency performance of 22FDX&amp;nbsp;®&amp;nbsp;FDSOI for 5G front-end power amplifiers. The following report focuses on the S-parameters and large-signal figure-of-merits such as output power, gain and power-added efficiency for an insightful and correct assessment on the device capability. DC characteristics of the test transistors are firstly investigated to determine the optimum operating point. Small-signal characterization is performed up to 110 GHz using a state-of-the-art mm-Wave measurement setup. An overall MSG/MAG of 16 ± 4 dB is recorded in the frequency range 10 - 80 GHz. On the other hand, large-signal performance on non-50 Ohm impedance environment is evaluated thoroughly through vector-receiver load-pull measurement up to 24 GHz. The measured output power and efficiency indicate that the DUTs perform well in the sub-6 GHz band and even in K-band. The outstanding experimental results emphasize the applicability and suitability of the 22FDX&amp;nbsp;®&amp;nbsp;FDSOI technology platform for 5G low-power transmitters.</style></abstract></record></records></xml>