<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Murong Zhuo</style></author><author><style face="normal" font="default" size="100%">Wu, Jiang</style></author><author><style face="normal" font="default" size="100%">Hongrong Qiu</style></author><author><style face="normal" font="default" size="100%">Haitao Li</style></author><author><style face="normal" font="default" size="100%">Li Ding</style></author><author><style face="normal" font="default" size="100%">Defu Wang</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">On-Chip CPW Low-Pass Filter with 50–110 GHz Bandstop in 400 nm Metal Thickness Technology Towards Lab-Level Ka-Band MMICs</style></title><secondary-title><style face="normal" font="default" size="100%">2023 IEEE MTT-S International Wireless Symposium (IWS)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2023</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/10222592</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IEEE Microwave Theory and Techniques Society (IEEE MTT-S)</style></publisher><pub-location><style face="normal" font="default" size="100%">Qingdao, China</style></pub-location><pages><style face="normal" font="default" size="100%">1-3</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper presents a millimeter-wave low-pass filter to investigate the RF performance of passive structures in a lab-level thin metal micro-nano processing technology. It consists of 3-stage periodic stepped-impedance cell to have a slow-wave structure to offer a high attenuation of stop band with a compact size. The total size of the chip is less than 1.1 mm&amp;nbsp;2&amp;nbsp;. It achieves an insertion loss of less than 2 dB at a frequency range from 0 to 110 GHz with a measured cut-off frequency around 40 GHz. A rejection of higher than 20 dB is measured in a stopband from 52 to 110 GHz, which is larger than 2 times of fundamental frequency. The measurement agrees well with the simulation results. It shows the potential of RF passives in a lab-level thinner metal thickness technology towards monolithic microwave integrated circuits.</style></abstract></record></records></xml>