@article {37403,
	title = {RF-Characterization of HZO Thin Film Varactors},
	journal = {Crystals},
	volume = {11},
	year = {2021},
	pages = {980},
	abstract = {A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2\&nbsp;of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a {\textquotedblleft}butterfly{\textquotedblright} shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6\% at 10 MHz to 15.4\% at 500 MHz.},
	url = {https://www.mdpi.com/2073-4352/11/8/980},
	author = {Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Defu Wang, Maximilian Lederer, Ricardo Olivo, Konstantin Mertens, Jennifer}
}
