@proceedings {37393,
	title = {DC-110 GHz Characterization of 22FDX{\textregistered}FDSOI Transistors for 5G Transmitter Front-End},
	journal = {ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC)},
	year = {2019},
	pages = {218-221},
	publisher = {IEEE},
	address = {Cracow, Poland},
	abstract = {This work presents a detailed study on the high-frequency performance of 22FDX\&nbsp;{\textregistered}\&nbsp;FDSOI for 5G front-end power amplifiers. The following report focuses on the S-parameters and large-signal figure-of-merits such as output power, gain and power-added efficiency for an insightful and correct assessment on the device capability. DC characteristics of the test transistors are firstly investigated to determine the optimum operating point. Small-signal characterization is performed up to 110 GHz using a state-of-the-art mm-Wave measurement setup. An overall MSG/MAG of 16 {\textpm} 4 dB is recorded in the frequency range 10 - 80 GHz. On the other hand, large-signal performance on non-50 Ohm impedance environment is evaluated thoroughly through vector-receiver load-pull measurement up to 24 GHz. The measured output power and efficiency indicate that the DUTs perform well in the sub-6 GHz band and even in K-band. The outstanding experimental results emphasize the applicability and suitability of the 22FDX\&nbsp;{\textregistered}\&nbsp;FDSOI technology platform for 5G low-power transmitters.},
	url = {https://ieeexplore.ieee.org/abstract/document/8901762},
	author = {Quang Huy Le and Dang Khoa Huynh and Defu Wang and Thomas K{\"a}mpfe and Steffen Lehmann}
}
