@proceedings {37385,
	title = {A 109{\textendash}137 GHz power amplifier in SiGe BiCMOS with 16.5 dBm output power and 12.8\% PAE},
	journal = {2017 47th European Microwave Conference (EuMC)},
	year = {2017},
	pages = {1021-1024},
	publisher = {IEEE},
	address = {Nuremberg, Germany},
	abstract = {This paper presents a 3-stage differential cascode power amplifier (PA) for 109{\textendash}137 GHz applications. At 120 GHz the circuit delivers 16.5 dBm saturated output power with 12.8 \% power-added efficiency (PAE) without using power combining techniques. The chip was fabricated in 130 nm SiGe BiCMOS technology offering heterojunction bipolar transistors (HBT) with f T /f max of 300/500 GHz. The PA consists of three stages optimized accordingly to the design goals. The first stage operates in class A to provide high gain while the two following stages are biased in class AB and deep class AB in order to increase the efficiency. The circuit draws a maximum current of 100 mA from 3.3 V and 4 V supplies. It occupies only 0.24 mm\&nbsp;2\&nbsp;chip area excluding baluns and bondpads, which makes it attractive for future power combiners. The presented amplifier is suitable for radar applications, that require a high dynamic range.},
	url = {https://ieeexplore.ieee.org/abstract/document/8231020},
	author = {Maciej Kucharski and Johannes Borngr{\"a}ber and Defu Wang and Dietmar Kissinger and Herman Jalli Ng}
}
