@proceedings {37367,
	title = {On-Chip CPW Low-Pass Filter with 50{\textendash}110 GHz Bandstop in 400 nm Metal Thickness Technology Towards Lab-Level Ka-Band MMICs},
	journal = {2023 IEEE MTT-S International Wireless Symposium (IWS)},
	year = {2023},
	pages = {1-3},
	publisher = {IEEE Microwave Theory and Techniques Society (IEEE MTT-S)},
	address = {Qingdao, China},
	abstract = {This paper presents a millimeter-wave low-pass filter to investigate the RF performance of passive structures in a lab-level thin metal micro-nano processing technology. It consists of 3-stage periodic stepped-impedance cell to have a slow-wave structure to offer a high attenuation of stop band with a compact size. The total size of the chip is less than 1.1 mm\&nbsp;2\&nbsp;. It achieves an insertion loss of less than 2 dB at a frequency range from 0 to 110 GHz with a measured cut-off frequency around 40 GHz. A rejection of higher than 20 dB is measured in a stopband from 52 to 110 GHz, which is larger than 2 times of fundamental frequency. The measurement agrees well with the simulation results. It shows the potential of RF passives in a lab-level thinner metal thickness technology towards monolithic microwave integrated circuits.},
	url = {https://ieeexplore.ieee.org/abstract/document/10222592},
	author = {Murong Zhuo and Wu, Jiang and Hongrong Qiu and Haitao Li and Li Ding and Defu Wang}
}
